IXFP36N30P3

Specifications

Channel Type

N

Rds On Drainsource Resistance

110 mOhms

Technology

Si

Category

Power MOSFET

Eccn Us

EAR99

Number Of Channels

1 Channel

Supplier Package

TO-220AB

Mounting

Through Hole

Package Length

10.66(Max)

Typical Rise Time Ns

39

Vds Drainsource Breakdown Voltage

300 V

Eu Rohs

Compliant

Typical Fall Time Ns

14

Typical Turnon Delay Time Ns

16

Tab

Tab

Qg Gate Charge

30 nC

Hts

8541.29.00.95

Typical Turnoff Delay Time Ns

36

Pin Sayısı

3

Maximum Gate Source Voltage V

±20

Automotive

No

Transistor Polarity

N-Channel

Parça Durumu

Active

Vgs Gatesource Voltage

- 20 V, + 20 V

Ppap

No

Typical Gate Charge10v Nc

30

Vgs Th Gatesource Threshold Voltage

2.5 V

Minimum Operating Temperature C

-55

Channel Mode

Enhancement

Minimum Operating Temperature

- 55 C

Maximum Continuous Drain Current A

36

Typical Gate Charge Vgs Nc

30@10V

Maximum Drain Source Resistance Mohm

110@10V

Pcb Changed

3

Configuration

Single

Seri

Polar3

Package Width

4.83(Max)

Package Height

9.15(Max)

Maximum Operating Temperature C

150

Id Continuous Drain Current

36 A