IXFP36N20X3M

Specifications

Vgs Th Gatesource Threshold Voltage

2.5 V

Typical Gate Charge10v Nc

21

Ppap

No

Automotive

No

Typical Turnoff Delay Time Ns

54

Qg Gate Charge

21 nC

Power Dissipation

36W

Tab

Tab

Vds Drainsource Breakdown Voltage

200 V

Eu Rohs

Compliant

Package Length

10.36(Max)

Typical Rise Time Ns

30

Number Of Channels

1 Channel

Supplier Package

OVERMOLDED TO-220

Channel Type

N

Rds On Drainsource Resistance

45 mOhms

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Input Capacitance Vds Pf

1425@25V

Maximum Power Dissipation Mw

36000

Number Of Elements Per Chip

1

Id Continuous Drain Current

36 A

Package Height

16.07(Max)

Maximum Operating Temperature C

150

Pcb Changed

3

Configuration

Single

Typical Gate Charge Vgs Nc

21@10V

Maximum Drain Source Resistance Mohm

45@10V

Channel Mode

Enhancement

Vgs Gatesource Voltage

- 20 V, + 20 V

Continuous Drain Current Id

36A

Parça Durumu

Active

Transistor Polarity

N-Channel

Maximum Gate Source Voltage V

±20

Hts

8541.29.00.95

Pin Sayısı

3

Typical Turnon Delay Time Ns

19

Typical Fall Time Ns

20

Mounting

Through Hole

Eccn Us

EAR99

Category

Power MOSFET