IXFP26N30X3

Specifications

Kılıf / Paket

TO-220-3

Pd Power Dissipation

170 W

Package Width

4.83(Max)

Montaj Stili

Through Hole

Maximum Drain Source Voltage V

300

Minimum Operating Temperature C

-55

Maximum Continuous Drain Current A

26

Minimum Operating Temperature

- 55 C

Continuous Drain Current Id

26A

Transistor Polarity

N-Channel

Parça Durumu

Active

Maximum Gate Source Voltage V

±20

Hts

8541.29.00.95

Pin Sayısı

3

Vgs Gatesource Voltage

- 20 V, + 20 V

Eccn Us

EAR99

Category

Power MOSFET

Technology

Si

Typical Turnon Delay Time Ns

23

Typical Fall Time Ns

19

Mounting

Through Hole

Id Continuous Drain Current

26 A

Package Height

9.15(Max)

Maximum Operating Temperature C

150

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Input Capacitance Vds Pf

1465@25V

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

170000

Pcb Changed

3

Configuration

Single

Typical Gate Charge Vgs Nc

22@10V

Maximum Drain Source Resistance Mohm

66@10V

Channel Mode

Enhancement

Automotive

No

Qg Gate Charge

22 nC

Typical Turnoff Delay Time Ns

80

Power Dissipation

170W

Vgs Th Gatesource Threshold Voltage

2.5 V

Typical Gate Charge10v Nc

22

Ppap

No