IXFP22N65X2M

Specifications

Maximum Drain Source Voltage V

650

Typical Input Capacitance Vds Pf

2190@25V

Maximum Power Dissipation Mw

37000

Number Of Elements Per Chip

1

Package Height

16.07(Max)

Maximum Operating Temperature C

150

Package Width

4.9(Max)

Typical Gate Charge Vgs Nc

37@10V

Maximum Drain Source Resistance Mohm

145@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

22

Pcb Changed

3

Configuration

Single

Minimum Operating Temperature C

-55

Typical Gate Charge10v Nc

37

Ppap

No

Typical Turnoff Delay Time Ns

42

Hts

8541.29.00.95

Pin Sayısı

3

Automotive

No

Parça Durumu

Active

Maximum Gate Source Voltage V

±30

Package Length

10.36(Max)

Typical Rise Time Ns

37

Mounting

Through Hole

Typical Turnon Delay Time Ns

30

Tab

Tab

Typical Fall Time Ns

18

Eu Rohs

Compliant

Channel Type

N

Supplier Package

OVERMOLDED TO-220

Category

Power MOSFET

Eccn Us

EAR99