IXFP22N60P3

Specifications

Package Height

9.15(Max)

Maximum Operating Temperature C

150

Package Width

4.83(Max)

Maximum Drain Source Voltage V

600

Typical Input Capacitance Vds Pf

2600@25V

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

500000

Minimum Operating Temperature C

-55

Maximum Drain Source Resistance Mohm

360@10V

Typical Gate Charge Vgs Nc

38@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

22

Pcb Changed

3

Configuration

Single

Typical Turnoff Delay Time Ns

54

Pin Sayısı

3

Automotive

No

Parça Durumu

Active

Maximum Gate Source Voltage V

±30

Typical Gate Charge10v Nc

38

Ppap

No

Channel Type

N

Process Technology

Polar3 HiperFET

Supplier Package

TO-220AB

Category

Power MOSFET

Eccn Us

EAR99

Typical Rise Time Ns

17

Package Length

10.66(Max)

Mounting

Through Hole

Typical Turnon Delay Time Ns

28

Tab

Tab

Typical Fall Time Ns

19

Eu Rohs

Compliant with Exemption