IXFP20N50P3M

Specifications

Minimum Operating Temperature C

-55

Maximum Gate Threshold Voltage V

5

Minimum Operating Temperature

- 55 C

Maximum Continuous Drain Current A

8

Pd Power Dissipation

58 W

Kılıf / Paket

TO-220-3

Package Width

4.83(Max)

Montaj Stili

Through Hole

Maximum Drain Source Voltage V

500

Eccn Us

EAR99

Category

Power MOSFET

Technology

Si

Typical Fall Time Ns

9

Typical Turnon Delay Time Ns

10

Mounting

Through Hole

Maximum Gate Source Voltage V

±30

Transistor Polarity

N-Channel

Parça Durumu

Active

Pin Sayısı

3

Vgs Gatesource Voltage

- 30 V, + 30 V

Configuration

Single

Pcb Changed

3

Channel Mode

Enhancement

Maximum Drain Source Resistance Mohm

300@10V

Typical Gate Charge Vgs Nc

36@10V

Id Continuous Drain Current

8 A

Maximum Operating Temperature C

150

Package Height

9.15(Max)

Maks. Çalışma Sıcaklığı

+ 150 C

Maximum Power Dissipation Mw

58000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

1800@25V

Maximum Idss Ua

25

Supplier Package

TO-220AB

Number Of Channels

1 Channel

Maximum Gate Source Leakage Current Na

100

Rds On Drainsource Resistance

300 mOhms

Channel Type

N

Process Technology

HiperFET

Eu Rohs

Compliant