IXFP20N50P3

Specifications

Mounting

Through Hole

Typical Rise Time Ns

5

Package Length

10.66(Max)

Typical Fall Time Ns

9

Eu Rohs

Compliant

Typical Turnon Delay Time Ns

10

Tab

Tab

Maximum Gate Source Leakage Current Na

100

Channel Type

N

Process Technology

HiperFET

Category

Power MOSFET

Eccn Us

EAR99

Supplier Package

TO-220AB

Ppap

No

Typical Gate Charge10v Nc

36

Typical Turnoff Delay Time Ns

43

Pin Sayısı

3

Maximum Gate Source Voltage V

±30

Parça Durumu

Active

Automotive

No

Channel Mode

Enhancement

Maximum Continuous Drain Current A

20

Typical Gate Charge Vgs Nc

36@10V

Maximum Drain Source Resistance Mohm

300@10V

Pcb Changed

3

Configuration

Single

Maximum Gate Threshold Voltage V

5

Minimum Operating Temperature C

-55

Typical Input Capacitance Vds Pf

1800@25V

Maximum Power Dissipation Mw

380000

Number Of Elements Per Chip

1

Maximum Idss Ua

25

Maximum Drain Source Voltage V

500

Package Width

4.83(Max)

Package Height

9.15(Max)

Maximum Operating Temperature C

150