IXFP16N60P3

Specifications

Montaj Stili

Through Hole

Maximum Drain Source Voltage V

600

Pd Power Dissipation

347 W

Kılıf / Paket

TO-220-3

Package Width

4.83(Max)

Maximum Continuous Drain Current A

16

Minimum Operating Temperature

- 55 C

Minimum Operating Temperature C

-55

Maximum Gate Threshold Voltage V

5

Vgs Gatesource Voltage

- 30 V, + 30 V

Transistor Polarity

N-Channel

Parça Durumu

Active

Maximum Gate Source Voltage V

±30

Pin Sayısı

3

Typical Turnon Delay Time Ns

20

Typical Fall Time Ns

8

Mounting

Through Hole

Eccn Us

EAR99

Category

Power MOSFET

Technology

Si

Maks. Çalışma Sıcaklığı

+ 150 C

Maximum Idss Ua

25

Maximum Power Dissipation Mw

347000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

1830@25V

Id Continuous Drain Current

16 A

Maximum Operating Temperature C

150

Package Height

9.15(Max)

Configuration

Single

Pcb Changed

3

Maximum Drain Source Resistance Mohm

470@10V

Typical Gate Charge Vgs Nc

36@10V

Channel Mode

Enhancement

Vgs Th Gatesource Threshold Voltage

3 V

Typical Gate Charge10v Nc

36

Ppap

No

Automotive

No

Typical Turnoff Delay Time Ns

42

Qg Gate Charge

36 nC

Tab

Tab