IXFP130N10T2

Specifications

Pin Sayısı

3

Typical Turnoff Delay Time Ns

24

Maximum Gate Source Voltage V

±20

Parça Durumu

Active

Automotive

No

Ppap

No

Typical Gate Charge10v Nc

130

Maximum Gate Source Leakage Current Na

200

Process Technology

HiperFET

Channel Type

N

Category

Power MOSFET

Supplier Package

TO-220AB

Mounting

Through Hole

Package Length

10.66(Max)

Typical Rise Time Ns

38

Typical Fall Time Ns

25

Eu Rohs

Compliant

Tab

Tab

Typical Turnon Delay Time Ns

16

Package Width

4.83(Max)

Maximum Operating Temperature C

175

Package Height

9.15(Max)

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

360000

Typical Input Capacitance Vds Pf

6600@25V

Maximum Idss Ua

10

Maximum Drain Source Voltage V

100

Maximum Gate Threshold Voltage V

4.5

Minimum Operating Temperature C

-55

Maximum Continuous Drain Current A

130

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

130@10V

Maximum Drain Source Resistance Mohm

10.1@10V

Configuration

Single

Pcb Changed

3