IXFP12N50P

Specifications

Maximum Drain Source Resistance Mohm

500@10V

Typical Gate Charge Vgs Nc

29@10V

Maximum Continuous Drain Current A

12

Channel Mode

Enhancement

Configuration

Single

Pcb Changed

3

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

500

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

200000

Typical Input Capacitance Vds Pf

1830@25V

Maximum Operating Temperature C

150

Package Height

9.15(Max)

Package Width

4.83(Max)

Typical Rise Time Ns

27

Package Length

10.66(Max)

Mounting

Through Hole

Tab

Tab

Typical Turnon Delay Time Ns

22

Typical Fall Time Ns

20

Eu Rohs

Compliant

Channel Type

N

Supplier Package

TO-220AB

Category

Power MOSFET

Eccn Us

EAR99

Typical Gate Charge10v Nc

29

Ppap

No

Pin Sayısı

3

Hts

8541.29.00.95

Typical Turnoff Delay Time Ns

65

Automotive

No

Parça Durumu

Active

Maximum Gate Source Voltage V

±30