IXFP110N15T2

Specifications

Package Length

10.66(Max)

Typical Rise Time Ns

16

Mounting

Through Hole

Typical Turnon Delay Time Ns

33

Tab

Tab

Vds Drainsource Breakdown Voltage

150 V

Typical Fall Time Ns

18

Eu Rohs

Compliant with Exemption

Channel Type

N

Rds On Drainsource Resistance

11 mOhms

Number Of Channels

1 Channel

Supplier Package

TO-220AB

Technology

Si

Category

Power MOSFET

Eccn Us

EAR99

Typical Gate Charge10v Nc

150

Vgs Gatesource Voltage

- 20 V, + 20 V

Ppap

No

Vgs Th Gatesource Threshold Voltage

4.5 V

Qg Gate Charge

150 nC

Hts

8541.29.00.95

Typical Turnoff Delay Time Ns

33

Pin Sayısı

3

Parça Durumu

Active

Transistor Polarity

N-Channel

Automotive

No

Maximum Gate Source Voltage V

±20

Typical Gate Charge Vgs Nc

150@10V

Maximum Drain Source Resistance Mohm

13@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

110

Minimum Operating Temperature

- 55 C

Pcb Changed

3

Configuration

Single

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

150

Typical Input Capacitance Vds Pf

8600@25V

Maximum Power Dissipation Mw

480000

Number Of Elements Per Chip

1

Maks. Çalışma Sıcaklığı

+ 175 C