IXFP10N80P

Specifications

Maximum Gate Source Voltage V

±30

Automotive

No

Parça Durumu

Active

Typical Turnoff Delay Time Ns

62

Pin Sayısı

3

Ppap

No

Typical Gate Charge10v Nc

40

Category

Power MOSFET

Eccn Us

EAR99

Supplier Package

TO-220AB

Channel Type

N

Process Technology

HiperFET

Eu Rohs

Compliant

Typical Fall Time Ns

22

Typical Turnon Delay Time Ns

21

Tab

Tab

Mounting

Through Hole

Typical Rise Time Ns

22

Package Length

10.66(Max)

Package Width

4.83(Max)

Package Height

9.15(Max)

Maximum Operating Temperature C

150

Typical Input Capacitance Vds Pf

2050@25V

Maximum Power Dissipation Mw

300000

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

800

Minimum Operating Temperature C

-55

Pcb Changed

3

Configuration

Single

Channel Mode

Enhancement

Maximum Continuous Drain Current A

10

Maximum Drain Source Resistance Mohm

1100@10V

Typical Gate Charge Vgs Nc

40@10V