IXFP102N15T

Specifications

Minimum Operating Temperature C

-55

Pcb Changed

3

Configuration

Single

Channel Mode

Enhancement

Maximum Continuous Drain Current A

102

Maximum Drain Source Resistance Mohm

18@10V

Typical Gate Charge Vgs Nc

87@10V

Id Continuous Drain Current

102 A

Kılıf / Paket

TO-220-3

Package Width

4.83(Max)

Package Height

9.15(Max)

Maximum Operating Temperature C

175

Montaj Stili

Through Hole

Typical Input Capacitance Vds Pf

5220@25V

Maximum Power Dissipation Mw

455000

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

150

Technology

Si

Category

Power MOSFET

Supplier Package

TO-220AB

Process Technology

HiperFET

Channel Type

N

Rds On Drainsource Resistance

18 mOhms

Vds Drainsource Breakdown Voltage

150 V

Typical Fall Time Ns

22

Eu Rohs

Compliant

Typical Turnon Delay Time Ns

20

Tab

Tab

Mounting

Through Hole

Typical Rise Time Ns

14

Package Length

10.66(Max)

Maximum Gate Source Voltage V

±20

Parça Durumu

Active

Automotive

No

Transistor Polarity

N-Channel

Typical Turnoff Delay Time Ns

25

Pin Sayısı

3

Ppap

No

Typical Gate Charge10v Nc

87