IXFN94N50P2

Specifications

Maximum Gate Threshold Voltage V

5

Minimum Operating Temperature C

-55

Maximum Drain Source Resistance Mohm

55@10V

Typical Gate Charge Vgs Nc

220@10V

Maximum Continuous Drain Current A

68

Channel Mode

Enhancement

Configuration

Single Dual Source

Pcb Changed

4

Maximum Operating Temperature C

150

Package Height

9.6(Max)

Package Width

25.42(Max)

Maximum Drain Source Voltage V

500

Maximum Idss Ua

10

Lead Shape

Screw

Maximum Power Dissipation Mw

780000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

13700@25V

Channel Type

N

Process Technology

HiperFET

Maximum Gate Source Leakage Current Na

0.2

Supplier Package

SOT-227B

Category

Power MOSFET

Eccn Us

EAR99

Package Length

38.23(Max)

Typical Rise Time Ns

34

Mounting

Screw

Typical Turnon Delay Time Ns

15

Typical Fall Time Ns

11

Eu Rohs

Compliant with Exemption

Pin Sayısı

4

Typical Turnoff Delay Time Ns

67

Hts

8541.29.00.95

Standard Package Name

SOT

Automotive

No

Parça Durumu

Active

Maximum Gate Source Voltage V

±30

Typical Gate Charge10v Nc

220

Ppap

No