IXFN90N85X

Specifications

Maximum Operating Temperature C

150

Package Height

9.6(Max)

Package Width

25.42(Max)

Lead Shape

Screw

Maximum Idss Ua

50

Maximum Drain Source Voltage V

850

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

1200

Typical Input Capacitance Vds Pf

13300@25V

Minimum Operating Temperature C

-55

Maximum Gate Threshold Voltage V

5.5

Configuration

Single Dual Source

Pcb Changed

4

Typical Gate Charge Vgs Nc

340@10V

Maximum Drain Source Resistance Mohm

41@10V

Maximum Continuous Drain Current A

90

Channel Mode

Enhancement

Automotive

No

Parça Durumu

Active

Continuous Drain Current Id

90A

Maximum Gate Source Voltage V

±30

Pin Sayısı

4

Typical Turnoff Delay Time Ns

126

Standard Package Name

SOT

Power Dissipation

1.2kW

Typical Gate Charge10v Nc

340

Ppap

No

Supplier Package

SOT-227B

Category

Power MOSFET

Eccn Us

EAR99

Channel Type

N

Process Technology

HiperFET

Maximum Gate Source Leakage Current Na

200

Typical Turnon Delay Time Ns

50

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

8

Package Length

38.23(Max)

Typical Rise Time Ns

20

Mounting

Screw