IXFN82N60P

Specifications

Configuration

Single Dual Source

Pcb Changed

4

Maximum Drain Source Resistance Mohm

75@10V

Typical Gate Charge Vgs Nc

240@10V

Maximum Continuous Drain Current A

72

Channel Mode

Enhancement

Minimum Operating Temperature C

-55

Maximum Gate Threshold Voltage V

5

Maximum Drain Source Voltage V

600

Lead Shape

Screw

Maximum Idss Ua

50

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

1040000

Typical Input Capacitance Vds Pf

23000@25V

Maximum Operating Temperature C

150

Package Height

9.6(Max)

Package Width

25.42(Max)

Typical Turnon Delay Time Ns

28

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

24

Package Length

38.23(Max)

Typical Rise Time Ns

23

Mounting

Screw

Supplier Package

SOT-227B

Category

Power MOSFET

Eccn Us

EAR99

Channel Type

N

Process Technology

HiperFET

Maximum Gate Source Leakage Current Na

200

Typical Gate Charge10v Nc

240

Ppap

No

Parça Durumu

Active

Automotive

No

Maximum Gate Source Voltage V

±30

Material

Si

Pin Sayısı

4

Typical Turnoff Delay Time Ns

79

Hts

8541.29.00.95

Standard Package Name

SOT