IXFN80N50Q2

Specifications

Minimum Operating Temperature C

-55

Typical Turnon Delay Time

29 ns

Typical Turnoff Delay Time

60 ns

Maximum Continuous Drain Current A

72

Minimum Operating Temperature

- 55 C

Pd Power Dissipation

890 W

Kılıf / Paket

SOT-227-4

Package Width

25.42(Max)

Seri

HiPerFET

Montaj Stili

Chassis Mount

Maximum Drain Source Voltage V

500

Lead Shape

Screw

Category

Power MOSFET

Eccn Us

EAR99

Technology

Si

Typical Turnon Delay Time Ns

29

Typical Fall Time Ns

11

Mounting

Screw

Parça Durumu

NRND

Maximum Gate Source Voltage V

±30

Pin Sayısı

4

Hts

8541.29.00.95

Vgs Gatesource Voltage

- 30 V, + 30 V

Configuration

Single Dual Source

Pcb Changed

4

Typical Gate Charge Vgs Nc

250@10V

Maximum Drain Source Resistance Mohm

65@10V

Channel Mode

Enhancement

Maximum Operating Temperature C

150

Package Height

9.6(Max)

Maks. Çalışma Sıcaklığı

+ 150 C

Ürün Tipi

Discrete Semiconductor Modules

Maximum Power Dissipation Mw

890000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

12800@25V

Supplier Package

SOT-227B

Rds On Drainsource Resistance

60 mOhms

Channel Type

N

Eu Rohs

Compliant with Exemption

Package Length

38.23(Max)