IXFN64N50PD3

Specifications

Typical Turnon Delay Time

30 ns

Minimum Operating Temperature C

-55

Channel Mode

Enhancement

Minimum Operating Temperature

- 55 C

Maximum Continuous Drain Current A

50

Typical Gate Charge Vgs Nc

150@10V

Maximum Drain Source Resistance Mohm

85@10V

Typical Turnoff Delay Time

85 ns

Configuration

Single

Maximum Operating Temperature C

150

Kılıf / Paket

SOT-227B-4

Pd Power Dissipation

625 W

Typical Input Capacitance Vds Pf

9700@25V

Maximum Power Dissipation Mw

625000

Number Of Elements Per Chip

1

Ürün Tipi

Discrete Semiconductor Modules

Maximum Drain Source Voltage V

500

Montaj Stili

Chassis Mount

Maks. Çalışma Sıcaklığı

+ 150 C

Channel Type

N

Process Technology

HiperFET

Rds On Drainsource Resistance

85 mOhms

Technology

Si

Category

Power MOSFET

Eccn Us

EAR99

Supplier Package

SOT-227B

Typical Rise Time Ns

25

Eu Rohs

Compliant

Typical Fall Time Ns

22

Typical Turnon Delay Time Ns

30

Rise Time

25 ns

Typical Turnoff Delay Time Ns

85

Maximum Gate Source Voltage V

±30

Automotive

No

Parça Durumu

Obsolete

Vgs Gatesource Voltage

- 30 V, + 30 V

Ppap

No

Typical Gate Charge10v Nc

150