IXFN52N90P

Specifications

Typical Gate Charge10v Nc

308

Pd Power Dissipation

890 W

Typical Turnoff Delay Time Ns

95

Vgs Gatesource Voltage

- 30 V, + 30 V

Ürün Tipi

Discrete Semiconductor Modules

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

63

Technology

Si

Typical Fall Time Ns

42

Tip

Polar Power MOSFET

Channel Mode

Enhancement

Typical Rise Time Ns

80

Configuration

Single Dual Source

Minimum Operating Temperature

- 55 C

Parça Durumu

Active

Maximum Power Dissipation Mw

890000

Pin Sayısı

4

Typical Gate Charge Vgs Nc

308@10V

Maks. Çalışma Sıcaklığı

+ 150 C

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

900

Eu Rohs

Compliant with Exemption

Montaj Stili

Chassis Mount

Kılıf / Paket

SOT-227-4

Category

Power MOSFET

Rds On Drainsource Resistance

160 mOhms

Package Length

38.23(Max)

Mounting

Screw

Channel Type

N

Pcb Changed

4

Maximum Drain Source Resistance Mohm

160@10V

Automotive

No

Rise Time

80 ns

Maximum Gate Source Voltage V

±30

Maximum Continuous Drain Current A

43

Package Width

25.42(Max)

Maximum Operating Temperature C

150

Typical Turnon Delay Time

63 ns

Supplier Package

SOT-227B