IXFN44N80Q3

Specifications

Typical Gate Charge Vgs Nc

185@10V

Pin Sayısı

4

Maximum Power Dissipation Mw

780000

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

800

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Typical Fall Time Ns

20

Typical Turnon Delay Time Ns

45

Number Of Elements Per Chip

1

Typical Turnoff Delay Time Ns

63

Typical Gate Charge10v Nc

185

Parça Durumu

Active

Configuration

Single Dual Source

Typical Rise Time Ns

60

Channel Mode

Enhancement

Package Width

25.42(Max)

Maximum Continuous Drain Current A

37

Maximum Gate Source Voltage V

±30

Typical Input Capacitance Vds Pf

10650@25V

Ppap

No

Supplier Package

SOT-227B

Maximum Operating Temperature C

150

Mounting

Screw

Package Length

38.23(Max)

Category

Power MOSFET

Automotive

No

Maximum Drain Source Resistance Mohm

190@10V

Pcb Changed

4

Channel Type

N