IXFN420N10T

Specifications

Rds On Max Id Vgs

2.3m Ω @ 60A, 10V

Current Continuous Drain Id25

420A Tc

Maximum Gate Source Voltage V

±20

Additional Feature

AVALANCHE RATED, UL RECOGNIZED

Standard Package Name

SOT

Operating Mode

ENHANCEMENT MODE

Supplier Package

SOT-227B

Maximum Operating Temperature C

175

Package Length

38.23(Max)

Fet Type

N-Channel

Kurşunsuz Kodu

yes

Category

Power MOSFET

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

4

Gate Charge Qg Max Vgs

670nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Automotive

No

Continuous Drain Current Id

420A

Package Height

9.6(Max)

Pcb Changed

4

Channel Type

N

Number Of Elements

1

Eccn Us

EAR99

ECCN Kodu

EAR99

Lead Shape

Screw

Qualification Status

Not Qualified

Drainsource On Resistancemax

0.0023Ohm

Kılıf / Paket

SOT-227-4, miniBLOC

Transistor Element Material

SILICON

Maximum Drain Source Voltage V

100

Minimum Operating Temperature C

-55

Svhc

Yes

Number Of Elements Per Chip

1

Terminal Kaplaması

Nickel (Ni)

Seri

GigaMOS™ HiPerFET™

Typical Gate Charge10v Nc

670

Montaj Tipi

Chassis Mount

Configuration

Single Dual Source

Typical Rise Time Ns

155

Ds Breakdown Voltagemin

100V