IXFN32N80P

Specifications

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

800

Eu Rohs

Compliant

Pin Sayısı

4

Typical Gate Charge Vgs Nc

150@10V

Maximum Power Dissipation Mw

625000

Configuration

Single Dual Source

Parça Durumu

Active

Channel Mode

Enhancement

Typical Rise Time Ns

29

Number Of Elements Per Chip

1

Typical Fall Time Ns

26

Typical Turnon Delay Time Ns

30

Typical Gate Charge10v Nc

150

Typical Turnoff Delay Time Ns

85

Typical Input Capacitance Vds Pf

8820@25V

Maximum Operating Temperature C

150

Supplier Package

SOT-227B

Ppap

No

Maximum Continuous Drain Current A

29

Package Width

25.42(Max)

Maximum Gate Source Voltage V

±30

Automotive

No

Channel Type

N

Pcb Changed

4

Maximum Drain Source Resistance Mohm

270@10V

Package Length

38.23(Max)

Mounting

Screw

Category

Power MOSFET