IXFN32N120P

Specifications

Maximum Gate Source Voltage V

±30

Standard Package Name

SOT

Supplier Package

SOT-227B

Maximum Operating Temperature C

150

Package Length

38.23(Max)

Category

Power MOSFET

Automotive

No

Package Height

9.6(Max)

Rise Time

62 ns

Channel Type

N

Eccn Us

EAR99

Pcb Changed

4

Maks. Çalışma Sıcaklığı

+ 150 C

Lead Shape

Screw

Kılıf / Paket

SOT-227-4

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Maximum Drain Source Voltage V

1200

Tip

Polar HiPerFET Power MOSFET

Technology

Si

Number Of Elements Per Chip

1

Seri

HiPerFET

Typical Gate Charge10v Nc

360

Ürün Tipi

Discrete Semiconductor Modules

Vgs Gatesource Voltage

- 30 V, + 30 V

Configuration

Single Dual Source

Typical Rise Time Ns

62

Channel Mode

Enhancement

Maximum Continuous Drain Current A

32

Package Width

25.42(Max)

Typical Input Capacitance Vds Pf

27000@25V

Typical Turnon Delay Time

70 ns

Ppap

No

Typical Turnoff Delay Time

88 ns

Mounting

Screw

Rds On Drainsource Resistance

310 mOhms

Maximum Drain Source Resistance Mohm

310@10V

Pin Sayısı

4

Typical Gate Charge Vgs Nc

360@10V

Maximum Power Dissipation Mw

1000000