IXFN32N100P

Specifications

Maximum Power Dissipation Mw

690000

Pin Sayısı

4

Typical Gate Charge Vgs Nc

225@10V

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

1000

Typical Gate Charge10v Nc

225

Typical Turnoff Delay Time Ns

76

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

50

Typical Fall Time Ns

43

Typical Rise Time Ns

55

Channel Mode

Enhancement

Configuration

Single Dual Source

Parça Durumu

Active

Maximum Gate Source Voltage V

±30

Maximum Continuous Drain Current A

27

Package Width

25.42(Max)

Supplier Package

SOT-227B

Maximum Operating Temperature C

150

Ppap

No

Typical Input Capacitance Vds Pf

14200@25V

Category

Power MOSFET

Mounting

Screw

Package Length

38.23(Max)

Channel Type

N

Maximum Drain Source Resistance Mohm

320@10V

Pcb Changed

4

Automotive

No