IXFN30N120P

Specifications

Typical Rise Time Ns

60

Channel Mode

Enhancement

Configuration

Single Dual Source

Parça Durumu

Active

Typical Gate Charge10v Nc

310

Typical Turnoff Delay Time Ns

95

Typical Fall Time Ns

56

Typical Turnon Delay Time Ns

57

Number Of Elements Per Chip

1

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

1200

Maximum Power Dissipation Mw

890000

Pin Sayısı

4

Typical Gate Charge Vgs Nc

310@10V

Channel Type

N

Maximum Drain Source Resistance Mohm

350@10V

Pcb Changed

4

Automotive

No

Category

Power MOSFET

Mounting

Screw

Package Length

38.23(Max)

Supplier Package

SOT-227B

Maximum Operating Temperature C

150

Ppap

No

Typical Input Capacitance Vds Pf

19000@25V

Maximum Gate Source Voltage V

±30

Maximum Continuous Drain Current A

30

Package Width

25.42(Max)