IXFN300N10P

Specifications

Eu Rohs

Compliant with Exemption

Montaj Stili

Screw Mounts

Maximum Power Dissipation Mw

1070000

Typical Gate Charge Vgs Nc

279@10V

Pin Sayısı

4

Parça Durumu

Active

Minimum Operating Temperature

- 55 C

Hts

8541.29.00.95

Typical Turnoff Delay Time Ns

56

Pd Power Dissipation

1.07 kW

Typical Fall Time Ns

25

Typical Turnon Delay Time Ns

36

Typical Turnoff Delay Time

56 ns

Ppap

No

Typical Turnon Delay Time

36 ns

Typical Input Capacitance Vds Pf

23000@25V

Package Width

25.42(Max)

Maximum Continuous Drain Current A

295

Maximum Drain Source Resistance Mohm

5.5@10V

Mounting

Screw

Rds On Drainsource Resistance

5.5 mOhms

Maximum Drain Source Voltage V

100

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Kılıf / Paket

SOT-227-4

Maks. Çalışma Sıcaklığı

+ 175 C

Lead Shape

Screw

Typical Rise Time Ns

35

Channel Mode

Enhancement

Configuration

Single Dual Source

Ürün Tipi

Discrete Semiconductor Modules

Vgs Gatesource Voltage

- 20 V, + 20 V

Seri

IXFN300N10

Typical Gate Charge10v Nc

279

Tip

Polar Power MOSFET HiPerFET

Number Of Elements Per Chip

1

Technology

Si

Supplier Package

SOT-227B

Maximum Operating Temperature C

175

Standard Package Name

SOT