IXFN26N100P

Specifications

Typical Rise Time Ns

45

Channel Mode

Enhancement

Parça Durumu

Active

Configuration

Single Dual Source

Typical Turnoff Delay Time Ns

72

Typical Gate Charge10v Nc

197

Typical Fall Time Ns

50

Typical Turnon Delay Time Ns

45

Number Of Elements Per Chip

1

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

1000

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Maximum Power Dissipation Mw

595000

Typical Gate Charge Vgs Nc

197@10V

Pin Sayısı

4

Maximum Drain Source Resistance Mohm

390@10V

Pcb Changed

4

Channel Type

N

Automotive

No

Category

Power MOSFET

Mounting

Screw

Package Length

38.23(Max)

Ppap

No

Supplier Package

SOT-227B

Maximum Operating Temperature C

150

Typical Input Capacitance Vds Pf

11.9@25V

Maximum Gate Source Voltage V

±30

Package Width

25.42(Max)

Maximum Continuous Drain Current A

23