IXFN210N30P3

Specifications

Maximum Drain Source Voltage V

300

Eu Rohs

Compliant with Exemption

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Typical Gate Charge Vgs Nc

268@10V

Lead Shape

Screw

Pin Sayısı

4

Maximum Idss Ua

50

Maximum Power Dissipation Mw

1500000

Parça Durumu

Active

Configuration

Single Dual Source

Hts

8541.29.00.95

Channel Mode

Enhancement

Typical Rise Time Ns

25

Maximum Gate Threshold Voltage V

5

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

46

Typical Fall Time Ns

13

Typical Turnoff Delay Time Ns

94

Typical Gate Charge10v Nc

268

Standard Package Name

SOT

Typical Input Capacitance Vds Pf

16200@25V

Ppap

No

Power Dissipation

1.5kW

Maximum Operating Temperature C

150

Supplier Package

SOT-227B

Package Width

25.42(Max)

Maximum Continuous Drain Current A

192

Maximum Gate Source Voltage V

±20

Maximum Gate Source Leakage Current Na

200

Package Height

9.6(Max)

Continuous Drain Current Id

192A

Automotive

No

Pcb Changed

4

Maximum Drain Source Resistance Mohm

14.5@10V

Eccn Us

EAR99

Channel Type

N

Package Length

38.23(Max)

Mounting

Screw

Category

Power MOSFET