IXFN200N10P

Specifications

Channel Mode

Enhancement

Typical Rise Time Ns

35

Configuration

Single Dual Source

Hts

8541.29.00.95

Parça Durumu

Active

Typical Gate Charge10v Nc

235

Typical Turnoff Delay Time Ns

150

Typical Fall Time Ns

90

Typical Turnon Delay Time Ns

30

Number Of Elements Per Chip

1

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

100

Eu Rohs

Compliant with Exemption

Maximum Power Dissipation Mw

680000

Pin Sayısı

4

Typical Gate Charge Vgs Nc

235@10V

Lead Shape

Screw

Eccn Us

EAR99

Channel Type

N

Pcb Changed

4

Maximum Drain Source Resistance Mohm

7.5@10V

Package Height

9.6(Max)

Automotive

No

Category

Power MOSFET

Package Length

38.23(Max)

Mounting

Screw

Maximum Operating Temperature C

175

Supplier Package

SOT-227B

Ppap

No

Typical Input Capacitance Vds Pf

7600@25V

Standard Package Name

SOT

Maximum Gate Source Voltage V

±20

Maximum Continuous Drain Current A

200

Package Width

25.42(Max)