IXFN170N65X2

Specifications

Package Length

38.23(Max)

Operating Junction Temperature C

-55 to 150

Category

Power MOSFET

Typical Gate Plateau Voltage V

6.9

Continuous Drain Current Id

170A

Package Height

9.6(Max)

Automotive

No

Pcb Changed

4

Typical Reverse Transfer Capacitance Vds Pf

12400@25V

Maximum Positive Gate Source Voltage V

30

Eccn Us

EAR99

Channel Type

N

Maximum Gate Source Voltage V

±30

Maximum Gate Source Leakage Current Na

200

Standard Package Name

SOT

Typical Reverse Recovery Time Ns

270

Typical Output Capacitance Pf

15.8

Maximum Pulsed Drain Current Tc25c A

340

Power Dissipation

1.17kW

Maximum Operating Temperature C

150

Supplier Package

SOT-227B

Svhc

Yes

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

434

Configuration

Single Dual Source

Channel Mode

Enhancement

Typical Rise Time Ns

15

Lead Shape

Screw

Typical Gate To Source Charge Nc

166

Maximum Drain Source Voltage V

650

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Mounting

Screw

Typical Gate To Drain Charge Nc

137@10V

Maximum Drain Source Resistance Mohm

13@10V

Package Width

25.42(Max)

Maximum Continuous Drain Current A

170

Typical Input Capacitance Vds Pf

27000@25V

Ppap

No

Typical Turnon Delay Time Ns

60