IXFN170N30P

Specifications

Typical Rise Time Ns

29

Channel Mode

Enhancement

Parça Durumu

Active

Hts

8541.29.00.95

Configuration

Single Dual Source

Typical Turnoff Delay Time Ns

79

Typical Gate Charge10v Nc

258

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

41

Typical Fall Time Ns

16

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

300

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Maximum Power Dissipation Mw

890000

Lead Shape

Screw

Typical Gate Charge Vgs Nc

258@10V

Pin Sayısı

4

Maximum Drain Source Resistance Mohm

18@10V

Pcb Changed

4

Channel Type

N

Eccn Us

EAR99

Automotive

No

Package Height

9.6(Max)

Category

Power MOSFET

Mounting

Screw

Package Length

38.23(Max)

Ppap

No

Supplier Package

SOT-227B

Maximum Operating Temperature C

150

Standard Package Name

SOT

Typical Input Capacitance Vds Pf

20@25V

Maximum Gate Source Voltage V

±20

Package Width

25.42(Max)

Maximum Continuous Drain Current A

138