IXFL60N80P

Specifications

Mounting

Through Hole

Package Length

20.29(Max)

Category

Power MOSFET

Automotive

No

Package Height

26.42(Max)

Maximum Drain Source Resistance Mohm

150@10V

Pcb Changed

3

Channel Type

N

Package Width

5.21(Max)

Maximum Continuous Drain Current A

40

Maximum Gate Source Voltage V

±30

Typical Input Capacitance Vds Pf

18000@25V

Ppap

No

Supplier Package

ISOPLUS 264

Maximum Operating Temperature C

150

Typical Fall Time Ns

26

Typical Turnon Delay Time Ns

36

Number Of Elements Per Chip

1

Typical Turnoff Delay Time Ns

110

Typical Gate Charge10v Nc

250

Parça Durumu

Active

Tab

Tab

Configuration

Single

Typical Rise Time Ns

29

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

250@10V

Material

Si

Pin Sayısı

3

Maximum Power Dissipation Mw

625000

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

800

Minimum Operating Temperature C

-55

Process Technology

HiperFET