IXFL38N100P

Specifications

Typical Turnon Delay Time Ns

74

Typical Fall Time Ns

40

Pd Power Dissipation

520 W

Number Of Channels

1 Channel

Typical Turnoff Delay Time Ns

71

Minimum Operating Temperature

- 55 C

Tab

Tab

Hts

8541.29.00.95

Parça Durumu

Active

Pin Sayısı

3

Material

Si

Typical Gate Charge Vgs Nc

350@10V

Maximum Power Dissipation Mw

520000

Montaj Stili

Through Hole

Eu Rohs

Compliant

Mounting

Through Hole

Rds On Drainsource Resistance

230 mOhms

Maximum Drain Source Resistance Mohm

230@10V

Maximum Continuous Drain Current A

29

Package Width

5.21(Max)

Qg Gate Charge

350 nC

Typical Input Capacitance Vds Pf

24000@25V

Ppap

No

Technology

Si

Number Of Elements Per Chip

1

Seri

IXFL38N100

Typical Gate Charge10v Nc

350

Vgs Gatesource Voltage

- 30 V, + 30 V

Configuration

Single

Typical Rise Time Ns

55

Channel Mode

Enhancement

Maks. Çalışma Sıcaklığı

+ 150 C

Transistor Polarity

N-Channel

Kılıf / Paket

TO-264-3

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

3.5 V

Process Technology

HiperFET

Maximum Drain Source Voltage V

1000

Package Length

20.29(Max)

Category

Power MOSFET