IXFL210N30P3

Specifications

Category

Power MOSFET

Mounting

Through Hole

Package Length

20.29(Max)

Maximum Drain Source Resistance Mohm

16@10V

Pcb Changed

3

Channel Type

N

Eccn Us

EAR99

Automotive

No

Package Height

26.42(Max)

Maximum Gate Source Voltage V

±20

Maximum Gate Source Leakage Current Na

200

Package Width

5.21(Max)

Maximum Continuous Drain Current A

108

Ppap

No

Supplier Package

ISOPLUS 264

Maximum Operating Temperature C

150

Typical Input Capacitance Vds Pf

16200@25V

Typical Turnoff Delay Time Ns

94

Typical Gate Charge10v Nc

268

Typical Fall Time Ns

13

Typical Turnon Delay Time Ns

46

Number Of Elements Per Chip

1

Typical Rise Time Ns

25

Channel Mode

Enhancement

Maximum Gate Threshold Voltage V

15

Parça Durumu

Active

Tab

Tab

Configuration

Single

Maximum Idss Ua

50

Maximum Power Dissipation Mw

520000

Typical Gate Charge Vgs Nc

268@10V

Pin Sayısı

3

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

300

Minimum Operating Temperature C

-55

Process Technology

HiperFET