IXFK98N50P3

Specifications

Pcb Changed

3

Maximum Drain Source Resistance Mohm

50@10V

Channel Type

N

Package Height

26.16(Max)

Automotive

No

Category

Power MOSFET

Package Length

19.96(Max)

Mounting

Through Hole

Ppap

No

Maximum Operating Temperature C

150

Supplier Package

TO-264AA

Typical Input Capacitance Vds Pf

13100@25V

Maximum Gate Source Voltage V

±30

Package Width

5.13(Max)

Maximum Continuous Drain Current A

98

Channel Mode

Enhancement

Typical Rise Time Ns

8

Parça Durumu

Active

Tab

Tab

Configuration

Single

Typical Turnoff Delay Time Ns

65

Typical Gate Charge10v Nc

197

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

35

Typical Fall Time Ns

6

Maximum Drain Source Voltage V

500

Eu Rohs

Compliant

Process Technology

Polar3 HiperFET

Minimum Operating Temperature C

-55

Maximum Power Dissipation Mw

1300000

Typical Gate Charge Vgs Nc

197@10V

Pin Sayısı

3