IXFK80N50Q3

Specifications

Mounting

Through Hole

Package Length

19.96(Max)

Category

Power MOSFET

Automotive

No

Package Height

26.16(Max)

Channel Type

N

Maximum Drain Source Resistance Mohm

65@10V

Pcb Changed

3

Maximum Continuous Drain Current A

80

Package Width

5.13(Max)

Maximum Gate Source Voltage V

±30

Typical Input Capacitance Vds Pf

10000@25V

Supplier Package

TO-264

Maximum Operating Temperature C

150

Ppap

No

Number Of Elements Per Chip

1

Typical Fall Time Ns

15

Typical Turnon Delay Time Ns

30

Typical Gate Charge10v Nc

200

Typical Turnoff Delay Time Ns

43

Tab

Tab

Configuration

Single

Parça Durumu

Active

Typical Rise Time Ns

20

Channel Mode

Enhancement

Pin Sayısı

3

Typical Gate Charge Vgs Nc

200@10V

Maximum Power Dissipation Mw

1250000

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

500