IXFK80N50P

Specifications

Number Of Elements Per Chip

1

Typical Fall Time Ns

16

Typical Turnon Delay Time Ns

25

Typical Turnoff Delay Time Ns

70

Typical Gate Charge10v Nc

197

Parça Durumu

Active

Configuration

Single

Tab

Tab

Hts

8541.29.00.95

Channel Mode

Enhancement

Typical Rise Time Ns

27

Typical Gate Charge Vgs Nc

197@10V

Pin Sayısı

3

Maximum Power Dissipation Mw

1040000

Maximum Drain Source Voltage V

500

Eu Rohs

Compliant with Exemption

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Package Length

19.96(Max)

Mounting

Through Hole

Category

Power MOSFET

Package Height

26.16(Max)

Automotive

No

Pcb Changed

3

Maximum Drain Source Resistance Mohm

65@10V

Eccn Us

EAR99

Channel Type

N

Package Width

5.13(Max)

Maximum Continuous Drain Current A

80

Maximum Gate Source Voltage V

±30

Typical Input Capacitance Vds Pf

12700@25V

Ppap

No

Maximum Operating Temperature C

150

Supplier Package

TO-264