IXFK66N50Q2

Specifications

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Gate Charge Vgs Nc

200@10V

Pin Sayısı

3

Maximum Power Dissipation Mw

735000

Kılıf / Paket

TO-264-3

Montaj Stili

Through Hole

Transistor Polarity

N-Channel

Eu Rohs

Compliant

Maximum Drain Source Voltage V

500

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

32

Technology

Si

Typical Fall Time Ns

10

Vgs Gatesource Voltage

- 30 V, + 30 V

Number Of Channels

1 Channel

Typical Turnoff Delay Time Ns

60

Pd Power Dissipation

735 W

Typical Gate Charge10v Nc

200

Parça Durumu

Obsolete

Minimum Operating Temperature

- 55 C

Configuration

Single

Tab

Tab

Typical Rise Time Ns

16

Channel Mode

Enhancement

Package Width

5.13(Max)

Id Continuous Drain Current

66 A

Maximum Continuous Drain Current A

66

Maximum Gate Source Voltage V

±30

Typical Input Capacitance Vds Pf

8400@25V

Ppap

No

Supplier Package

TO-264AA

Maximum Operating Temperature C

150

Vds Drainsource Breakdown Voltage

500 V

Mounting

Through Hole

Rds On Drainsource Resistance

74 mOhms

Package Length

19.96(Max)

Category

Power MOSFET

Automotive

No