IXFK64N60Q3

Specifications

Maximum Continuous Drain Current A

64

Qg Gate Charge

190 nC

Id Continuous Drain Current

64 A

Package Width

5.13(Max)

Maximum Gate Source Voltage V

±30

Typical Input Capacitance Vds Pf

9930@25V

Maximum Operating Temperature C

150

Vds Drainsource Breakdown Voltage

600 V

Supplier Package

TO-264

Ppap

No

Rds On Drainsource Resistance

95 mOhms

Package Length

19.96(Max)

Mounting

Through Hole

Category

Power MOSFET

Package Height

26.16(Max)

Automotive

No

Channel Type

N

Pcb Changed

3

Maximum Drain Source Resistance Mohm

95@10V

Pin Sayısı

3

Typical Gate Charge Vgs Nc

190@10V

Maximum Power Dissipation Mw

1250000

Transistor Polarity

N-Channel

Montaj Stili

Through Hole

Kılıf / Paket

TO-264-3

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

600

Eu Rohs

Compliant with Exemption

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

45

Technology

Si

Typical Fall Time Ns

11

Typical Gate Charge10v Nc

190

Pd Power Dissipation

1.25 kW

Seri

IXFK64N60

Typical Turnoff Delay Time Ns

50

Vgs Gatesource Voltage

- 30 V, + 30 V

Number Of Channels

1 Channel

Configuration

Single