IXFK520N075T2

Specifications

Category

Power MOSFET

Mounting

Through Hole

Rds On Drainsource Resistance

2.2 mOhms

Package Length

19.96(Max)

Channel Type

N

Maximum Drain Source Resistance Mohm

2.2@10V

Pcb Changed

3

Automotive

No

Package Height

26.16(Max)

Continuous Drain Current Id

520A

Maximum Gate Source Voltage V

±20

Maximum Continuous Drain Current A

520

Package Width

5.13(Max)

Qg Gate Charge

545 nC

Id Continuous Drain Current

520 A

Supplier Package

TO-264

Vds Drainsource Breakdown Voltage

75 V

Maximum Operating Temperature C

175

Power Dissipation

1.25kW

Ppap

No

Typical Input Capacitance Vds Pf

41000@25V

Pd Power Dissipation

1.25 kW

Typical Gate Charge10v Nc

545

Vgs Gatesource Voltage

- 20 V, + 20 V

Number Of Channels

1 Channel

Typical Turnoff Delay Time Ns

80

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

48

Technology

Si

Typical Fall Time Ns

35

Typical Rise Time Ns

36

Channel Mode

Enhancement

Minimum Operating Temperature

- 55 C

Configuration

Single

Tab

Tab

Parça Durumu

Active

Maximum Power Dissipation Mw

1250000

Pin Sayısı

3

Maks. Çalışma Sıcaklığı

+ 175 C

Typical Gate Charge Vgs Nc

545@10V