IXFK48N60Q3

Specifications

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

600

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Typical Gate Charge Vgs Nc

140@10V

Pin Sayısı

3

Maximum Power Dissipation Mw

1000000

Parça Durumu

Active

Configuration

Single

Tab

Tab

Typical Rise Time Ns

11

Channel Mode

Enhancement

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

37

Typical Fall Time Ns

9

Typical Turnoff Delay Time Ns

40

Typical Gate Charge10v Nc

140

Typical Input Capacitance Vds Pf

7020@25V

Ppap

No

Supplier Package

TO-264

Maximum Operating Temperature C

150

Package Width

5.13(Max)

Maximum Continuous Drain Current A

48

Maximum Gate Source Voltage V

±30

Automotive

No

Package Height

26.16(Max)

Maximum Drain Source Resistance Mohm

140@10V

Pcb Changed

3

Channel Type

N

Mounting

Through Hole

Package Length

19.96(Max)

Category

Power MOSFET