IXFK48N50

Specifications

Category

Power MOSFET

Package Length

19.96(Max)

Mounting

Through Hole

Channel Type

N

Pcb Changed

3

Maximum Drain Source Resistance Mohm

100@10V

Package Height

26.16(Max)

Automotive

No

Maximum Gate Source Voltage V

±20

Maximum Continuous Drain Current A

48

Package Width

5.13(Max)

Maximum Operating Temperature C

150

Supplier Package

TO-264AA

Ppap

No

Typical Input Capacitance Vds Pf

8400@25V

Typical Gate Charge10v Nc

270

Typical Turnoff Delay Time Ns

100

Number Of Elements Per Chip

1

Typical Fall Time Ns

30

Typical Turnon Delay Time Ns

30

Channel Mode

Enhancement

Typical Rise Time Ns

60

Configuration

Single

Hts

8542.39.00.01

Tab

Tab

Parça Durumu

NRND

Maximum Power Dissipation Mw

500000

Pin Sayısı

3

Typical Gate Charge Vgs Nc

270@10V

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

500

Eu Rohs

Compliant