IXFK44N80Q3

Specifications

Parça Durumu

Active

Tab

Tab

Configuration

Single

Typical Rise Time Ns

60

Channel Mode

Enhancement

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

45

Typical Fall Time Ns

20

Typical Turnoff Delay Time Ns

63

Typical Gate Charge10v Nc

185

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

800

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Typical Gate Charge Vgs Nc

185@10V

Pin Sayısı

3

Maximum Power Dissipation Mw

1250000

Automotive

No

Package Height

26.16(Max)

Maximum Drain Source Resistance Mohm

190@10V

Pcb Changed

3

Channel Type

N

Mounting

Through Hole

Package Length

19.96(Max)

Category

Power MOSFET

Typical Input Capacitance Vds Pf

10950@25V

Ppap

No

Supplier Package

TO-264

Maximum Operating Temperature C

150

Package Width

5.13(Max)

Maximum Continuous Drain Current A

44

Maximum Gate Source Voltage V

±30