IXFK44N50P

Specifications

Maximum Gate Source Voltage V

±30

Package Width

5.13(Max)

Maximum Continuous Drain Current A

44

Ppap

No

Supplier Package

TO-264

Maximum Operating Temperature C

150

Typical Input Capacitance Vds Pf

5440@25V

Category

Power MOSFET

Mounting

Through Hole

Package Length

19.96(Max)

Maximum Drain Source Resistance Mohm

140@10V

Pcb Changed

3

Channel Type

N

Eccn Us

EAR99

Automotive

No

Package Height

26.16(Max)

Maximum Power Dissipation Mw

658000

Typical Gate Charge Vgs Nc

98@10V

Pin Sayısı

3

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

500

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Typical Turnoff Delay Time Ns

85

Typical Gate Charge10v Nc

98

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

28

Typical Fall Time Ns

27

Typical Rise Time Ns

29

Channel Mode

Enhancement

Parça Durumu

Active

Hts

8541.29.00.95

Tab

Tab

Configuration

Single