IXFK40N90P

Specifications

Maximum Continuous Drain Current A

40

Qg Gate Charge

230 nC

Id Continuous Drain Current

40 A

Package Width

5.13(Max)

Maximum Gate Source Voltage V

±30

Typical Input Capacitance Vds Pf

14000@25V

Vds Drainsource Breakdown Voltage

900 V

Maximum Operating Temperature C

150

Supplier Package

TO-264

Ppap

No

Package Length

19.96(Max)

Rds On Drainsource Resistance

210 mOhms

Mounting

Through Hole

Category

Power MOSFET

Package Height

26.16(Max)

Automotive

No

Channel Type

N

Pcb Changed

3

Maximum Drain Source Resistance Mohm

230@10V

Pin Sayısı

3

Typical Gate Charge Vgs Nc

230@10V

Maks. Çalışma Sıcaklığı

+ 150 C

Maximum Power Dissipation Mw

960000

Transistor Polarity

N-Channel

Montaj Stili

Through Hole

Kılıf / Paket

TO-264-3

Process Technology

HiperFET

Vgs Th Gatesource Threshold Voltage

6.5 V

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

900

Eu Rohs

Compliant with Exemption

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

53

Typical Fall Time Ns

46

Technology

Si

Typical Gate Charge10v Nc

230

Pd Power Dissipation

960 W

Typical Turnoff Delay Time Ns

77

Number Of Channels

1 Channel

Vgs Gatesource Voltage

- 30 V, + 30 V