IXFK360N10T

Specifications

Typical Fall Time Ns

160

Typical Turnon Delay Time Ns

47

Number Of Elements Per Chip

1

Typical Turnoff Delay Time Ns

80

Typical Gate Charge10v Nc

525

Parça Durumu

Active

Tab

Tab

Configuration

Single

Channel Mode

Enhancement

Typical Rise Time Ns

100

Typical Gate Charge Vgs Nc

525@10V

Pin Sayısı

3

Maximum Power Dissipation Mw

1250000

Maximum Drain Source Voltage V

100

Eu Rohs

Compliant with Exemption

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Package Length

19.96(Max)

Mounting

Through Hole

Category

Power MOSFET

Package Height

26.16(Max)

Automotive

No

Pcb Changed

3

Maximum Drain Source Resistance Mohm

2.9@10V

Channel Type

N

Package Width

5.13(Max)

Maximum Continuous Drain Current A

360

Maximum Gate Source Voltage V

±20

Typical Input Capacitance Vds Pf

33000@25V

Ppap

No

Maximum Operating Temperature C

175

Supplier Package

TO-264