IXFK32N80Q3

Specifications

Pcb Changed

3

Maximum Drain Source Resistance Mohm

270@10V

Channel Type

N

Package Height

26.16(Max)

Automotive

No

Category

Power MOSFET

Package Length

19.96(Max)

Mounting

Through Hole

Ppap

No

Maximum Operating Temperature C

150

Supplier Package

TO-264

Typical Input Capacitance Vds Pf

6940@25V

Maximum Gate Source Voltage V

±30

Package Width

5.13(Max)

Maximum Continuous Drain Current A

32

Channel Mode

Enhancement

Typical Rise Time Ns

13

Parça Durumu

Active

Tab

Tab

Configuration

Single

Typical Turnoff Delay Time Ns

45

Typical Gate Charge10v Nc

140

Typical Fall Time Ns

10

Typical Turnon Delay Time Ns

38

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

800

Eu Rohs

Compliant with Exemption

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Maximum Power Dissipation Mw

1000000

Typical Gate Charge Vgs Nc

140@10V

Pin Sayısı

3