IXFK32N100X

Specifications

Typical Gate Charge10v Nc

130

Typical Turnoff Delay Time Ns

80

Category

Power MOSFET

Typical Fall Time Ns

12

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

29

Eccn Us

EAR99

Channel Type

N

Channel Mode

Enhancement

Typical Rise Time Ns

12

Maximum Drain Source Resistance Mohm

220@10V

Configuration

Single

Automotive

No

Parça Durumu

Active

Maximum Power Dissipation Mw

890000

Maximum Gate Source Voltage V

±30

Maximum Continuous Drain Current A

32

Typical Gate Charge Vgs Nc

130@10V

Maximum Operating Temperature C

150

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

1000

Ppap

No

Typical Input Capacitance Vds Pf

4075@25V