IXFK320N17T2

Specifications

Category

Power MOSFET

Mounting

Through Hole

Package Length

19.96(Max)

Maximum Drain Source Resistance Mohm

5.2@10V

Pcb Changed

3

Channel Type

N

Automotive

No

Package Height

26.16(Max)

Maximum Gate Source Voltage V

±20

Package Width

5.13(Max)

Maximum Continuous Drain Current A

320

Ppap

No

Supplier Package

TO-264

Maximum Operating Temperature C

175

Typical Input Capacitance Vds Pf

45@25V

Typical Turnoff Delay Time Ns

115

Pd Power Dissipation

1.67 mW

Typical Gate Charge10v Nc

640

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

46

Technology

Si

Typical Fall Time Ns

230

Typical Rise Time Ns

170

Channel Mode

Enhancement

Parça Durumu

Active

Minimum Operating Temperature

- 55 C

Configuration

Single

Tab

Tab

Hts

8541.29.00.95

Maximum Power Dissipation Mw

1670000

Maks. Çalışma Sıcaklığı

+ 175 C

Typical Gate Charge Vgs Nc

640@10V

Pin Sayısı

3

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

170

Minimum Operating Temperature C

-55

Process Technology

GigaMOS

Kılıf / Paket

TO-264

Montaj Stili

Through Hole