IXFK26N120P

Specifications

Typical Gate Charge10v Nc

255

Typical Turnoff Delay Time Ns

76

Number Of Elements Per Chip

1

Typical Fall Time Ns

58

Typical Turnon Delay Time Ns

56

Channel Mode

Enhancement

Typical Rise Time Ns

55

Configuration

Single

Tab

Tab

Parça Durumu

Active

Maximum Power Dissipation Mw

960000

Pin Sayısı

3

Typical Gate Charge Vgs Nc

255@10V

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

1200

Eu Rohs

Compliant with Exemption

Category

Power MOSFET

Package Length

19.96(Max)

Mounting

Through Hole

Channel Type

N

Pcb Changed

3

Maximum Drain Source Resistance Mohm

500@10V

Package Height

26.16(Max)

Automotive

No

Maximum Gate Source Voltage V

±30

Maximum Continuous Drain Current A

26

Package Width

5.13(Max)

Maximum Operating Temperature C

150

Supplier Package

TO-264

Ppap

No

Typical Input Capacitance Vds Pf

14000@25V